Memory device having word line with improved adhesion between work function member and conductive layer

ABSTRACT

The present application provides a memory device having a word line with an improved adhesion between a work function member and a conductive layer. The memory device includes a semiconductor substrate defined with an active area and including a recess extending into the semiconductor substrate, and a word line disposed within the recess, wherein the word line includes a first insulating layer disposed within and conformal to the recess, a conductive layer surrounded by the first insulating layer, a conductive member enclosed by the conductive layer, and a second insulating layer disposed over the conductive layer and conformal to the first insulating layer. A method of manufacturing the memory device is also disclosed.

TECHNICAL FIELD

The present disclosure relates to a memory device and a manufacturing method thereof, and more particularly, to a memory device having a word line (WL) with improved adhesion between a work function member and a conductive layer, and a manufacturing method of the memory device.

DISCUSSION OF THE BACKGROUND

Dynamic random-access memory (DRAM) is a type of semiconductor arrangement for storing bits of data in separate capacitors within an integrated circuit (IC). DRAMs are commonly formed as trench capacitor DRAM cells. An advanced method of fabricating a buried gate electrode involves building a gate electrode of a transistor and a word line in a trench in an active area (AA) comprising a shallow trench isolation (STI) structure.

Over the past few decades, as semiconductor fabrication technology has continuously improved, sizes of electronic devices have been correspondingly reduced. As a size of a cell transistor is reduced to a few nanometers in length, shrinkage may occur during thermal processes. The shrinkage may result in diminished adhesion between components of different materials and thus a significant drop in performance of the cell transistors. It is therefore desirable to develop improvements that address related manufacturing challenges.

SUMMARY

One aspect of the present disclosure provides a memory device. The memory device includes a semiconductor substrate defined with an active area and including a recess extending into the semiconductor substrate; and a word line disposed within the recess, wherein the word line includes a first insulating layer disposed within and conformal to the recess, a conductive layer surrounded by the first insulating layer, a conductive member enclosed by the conductive layer, and a second insulating layer disposed over the conductive layer and conformal to the first insulating layer.

In some embodiments, the second insulating layer is in contact with the conductive layer.

In some embodiments, the second insulating layer is disposed above the conductive member and the conductive layer.

In some embodiments, the first insulating layer and the second insulating layer include oxide.

In some embodiments, a thickness of the first insulating layer is substantially greater than or equal to a thickness of the second insulating layer.

In some embodiments, the second insulating layer is in contact with a top surface of the conductive layer.

In some embodiments, the second insulating layer is at least partially surrounded by the active area.

In some embodiments, the conductive layer includes titanium nitride (TiN).

In some embodiments, the conductive member includes tungsten (W).

In some embodiments, the word line includes a work function member surrounded by the second insulating layer, and a gate insulating member disposed over the work function member.

In some embodiments, a top surface of the work function member is substantially coplanar with a top surface of the second insulating layer.

In some embodiments, the gate insulating member is disposed over the second insulating layer.

In some embodiments, the gate insulating member is in contact with the second insulating layer and the work function member.

In some embodiments, the work function member and the gate insulating member are surrounded by the first insulating layer.

In some embodiments, a width of the gate insulating member is substantially greater than or equal to a total width of the second insulating layer and the work function member.

In some embodiments, the work function member includes polysilicon, and the gate insulating member includes nitride.

Another aspect of the present disclosure provides a memory device. The memory device includes a semiconductor substrate defined with an active area and including a recess extending into the semiconductor substrate; and a word line disposed within the recess, wherein the word line includes a first insulating layer disposed within and conformal to the recess, a conductive layer surrounded by the first insulating layer, a conductive member enclosed by the conductive layer, a second insulating layer disposed over the conductive layer and conformal to the first insulating layer, a work function member surrounded by the second insulating layer, and a third insulating layer surrounded by the second insulating layer and disposed over the work function member.

In some embodiments, the work function member is enclosed by the second insulating layer and the third insulating layer.

In some embodiments, the third insulating layer is disposed conformal to a top surface of the work function member.

In some embodiments, a thickness of the second insulating layer is substantially equal to a thickness of the third insulating layer.

In some embodiments, the second insulating layer and the third insulating layer are integrally formed.

In some embodiments, the second insulating layer and the third insulating layer include oxide.

In some embodiments, the second insulating layer and the third insulating layer include a same material.

In some embodiments, the first insulating layer is entirely covered by the conductive layer and the second insulating layer.

In some embodiments, the word line includes a gate insulating member surrounded by the second insulating layer and disposed over the third insulating layer and the work function member.

Another aspect of the present disclosure provides a method of manufacturing a memory device. The method includes steps of providing a semiconductor substrate defined with an active area and including an isolation structure surrounding the active area; forming a recess extending into the semiconductor substrate and across the active area; forming a first insulating layer conformal to the recess; disposing a first conductive material conformal to the first insulating layer; forming a conductive member surrounded by the first conductive material; disposing a second conductive material over the conductive member and removing a portion of the first conductive material above the second conductive material to form a conductive layer enclosing the conductive member; and forming a second insulating layer over the conductive layer and conformal to the first insulating layer.

In some embodiments, the formation of the second insulating layer is performed after the formation of the conductive layer and the formation of the conductive member.

In some embodiments, the formation of the second insulating layer includes disposing an insulating material by atomic layer deposition (ALD).

In some embodiments, the formation of the second insulating layer includes removing a portion of the insulating material by anisotropic etching.

In some embodiments, a top surface of the second insulating layer is substantially lower than a top surface of the first insulating layer and a top surface of the semiconductor substrate.

In some embodiments, a top surface of the second insulating layer is substantially coplanar with a top surface of the first insulating layer and a top surface of the semiconductor substrate.

In some embodiments, the method further includes forming a work function member over the conductive layer, wherein the work function member is surrounded by the second insulating layer.

In some embodiments, a top surface of the work function member is substantially coplanar with a top surface of the second insulating layer.

In some embodiments, a top surface of the work function member is substantially lower than a top surface of the second insulating layer.

In some embodiments, the method further includes forming a third insulating layer over the work function member, wherein the third insulating layer is surrounded by the second insulating layer.

In conclusion, because an insulating layer is disposed between a work function member and a conductive layer in a word line, an adhesion between the work function member and the conductive layer is increased or improved. Therefore, shrinkage or disappearance of the work function member after a thermal process can be prevented. An overall performance of the memory device and process of manufacturing the memory device are improved.

The foregoing has outlined rather broadly the features and technical advantages of the present disclosure in order that the detailed description of the disclosure that follows may be better understood. Additional features and advantages of the disclosure will be described hereinafter, and form the subject of the claims of the disclosure. It should be appreciated by those skilled in the art that the conception and specific embodiment disclosed may be readily utilized as a basis for modifying or designing other structures or processes for carrying out the same purposes of the present disclosure. It should also be realized by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the disclosure as set forth in the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a cross-sectional side view of a memory device in accordance with some embodiments of the present disclosure.

FIG. 2 is a cross-sectional side view of a memory device in accordance with other embodiments of the present disclosure.

FIG. 3 is a cross-sectional side view of a memory device in accordance with other embodiments of the present disclosure.

FIG. 4 is a cross-sectional side view of a memory device in accordance with other embodiments of the present disclosure.

FIG. 5 is a cross-sectional side view of a memory device in accordance with other embodiments of the present disclosure.

FIG. 6 is a flow diagram illustrating a method of manufacturing a memory device in accordance with some embodiments of the present disclosure.

FIGS. 7 to 37 illustrate cross-sectional views of intermediate stages in the formation of a memory device in accordance with some embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact.

In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature’s relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

FIG. 1 is a schematic cross-sectional side view of a memory device 100 in accordance with some embodiments of the present disclosure. In some embodiments, the memory device 100 includes several unit cells arranged in rows and columns.

In some embodiments, the memory device 100 includes a semiconductor substrate 101. In some embodiments, the semiconductor substrate 101 includes semiconductive material such as silicon, germanium, gallium, arsenic, or a combination thereof. In some embodiments, the semiconductor substrate 101 includes bulk semiconductor material. In some embodiments, the semiconductor substrate 101 is a semiconductor wafer (e.g., a silicon wafer) or a semiconductor-on-insulator (SOI) wafer (e.g., a silicon-on-insulator wafer). In some embodiments, the semiconductor substrate 101 is a silicon substrate. In some embodiments, the semiconductor substrate 101 includes lightly-doped monocrystalline silicon. In some embodiments, the semiconductor substrate 101 is a p-type substrate.

In some embodiments, the semiconductor substrate 101 includes several active areas (AA) 101 a. The active area 101 a is a doped region in the semiconductor substrate 101. In some embodiments, the active area 101 a extends horizontally over or under a top surface 101 b of the semiconductor substrate 101. In some embodiments, each of the active areas 101 a includes a same type of dopant. In some embodiments, each of the active areas 101 a includes a type of dopant that is different from the types of dopants included in other active areas 101 a. In some embodiments, each of the active areas 101 a has a same conductive type. In some embodiments, the active area 101 a includes N-type dopants.

In some embodiments, the semiconductor substrate 101 includes the top surface 101 b and a bottom surface 101 c opposite to the top surface 101 b. In some embodiments, the top surface 101 b is a front side of the semiconductor substrate 101, wherein electrical devices or components are subsequently formed over the top surface 101 b and configured to electrically connect to an external circuitry. In some embodiments, the bottom surface 101 c is a back side of the semiconductor substrate 101, where electrical devices or components are absent.

In some embodiments, the semiconductor substrate 101 includes a recess 101 d extending into the semiconductor substrate 101. In some embodiments, the recess 101 d extends from the top surface 101 b toward the bottom surface 101 c of the semiconductor substrate 101. In some embodiments, the recess 101 d is tapered from the top surface 101 b toward the bottom surface 101 c of the semiconductor substrate 101. In some embodiments, a depth of the recess 101 d is substantially greater than a depth of the active area 101 a.

In some embodiments, the memory device 100 includes a word line 103 disposed within the recess 101 d. In some embodiments, the word line 103 includes a first insulating layer 103 a, a conductive layer 103 b, a conductive member 103 c and a second insulating layer 103 d. In some embodiments, the first insulating layer 103 a is disposed conformal to and within the recess 101 d. In some embodiments, the conductive layer 103 b is surrounded by the first insulating layer 103 a. In some embodiments, the conductive member 103 c is enclosed by the conductive layer 103 b. In some embodiments, the second insulating layer 103 d is disposed over the conductive layer 103 b and conformal to the first insulating layer 103 a.

In some embodiments, the first insulating layer 103 a is disposed along an entire sidewall of the recess 101 d. In some embodiments, the first insulating layer 103 a includes dielectric material such as oxide. In some embodiments, the first insulating layer 103 a is formed of an insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, the like, or a combination thereof. In some embodiments, the first insulating layer 103 a includes dielectric material with a low dielectric constant (low k).

In some embodiments, the conductive layer 103 b is disposed within the recess 101 d, wherein the conductive layer 103 b is surrounded by the first insulating layer 103 a. The conductive layer 103 b is conformal to a portion of the first insulating layer 103 a. In some embodiments, the conductive layer 103 b includes conductive material such as titanium nitride (TiN).

In some embodiments, the conductive member 103 c is disposed within the conductive layer 103 b. The conductive member 103 c is surrounded by the first insulating layer 103 a and the conductive layer 103 b. In some embodiments, the conductive member 103 c is disposed under the active area 101 a of the semiconductor substrate 101. In some embodiments, a portion of the conductive layer 103 b is disposed above the conductive member 103 c. In some embodiments, the conductive member 103 c includes conductive material such as tungsten (W).

In some embodiments, the second insulating layer 103 d is disposed over the conductive layer 103 b, wherein the second insulating layer 103 d is surrounded by the first insulating layer 103 a. The second insulating layer 103 d is disposed above the conductive member 103 c and the conductive layer 103 b. In some embodiments, the second insulating layer 103 d is in contact with the conductive layer 103 b. In some embodiments, the second insulating layer 103 d is conformal to a portion of the first insulating layer 103 a.

In some embodiments, the second insulating layer 103 d is in contact with a top surface 103 g of the conductive layer 103 b. In some embodiments, the second insulating layer 103 d is at least partially surrounded by the active area 101 a. In some embodiments, a top surface 103 i of the second insulating layer 103 d is substantially lower than the top surface 101 b of the semiconductor substrate 101 and a top surface 103 h of the first insulating layer 103 a.

In some embodiments, the second insulating layer 103 d includes dielectric material such as oxide. In some embodiments, the second insulating layer 103 d is formed of an insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, the like, or a combination thereof. In some embodiments, the first insulating layer 103 a and the second insulating layer 103 d include a same material or different materials. In some embodiments, a thickness of the first insulating layer 103 a is substantially greater than or equal to a thickness of the second insulating layer 103 d. In some embodiments, the thickness of the second insulating layer 103 d is in a range of about 1 nm to about 3 nm. In some embodiments, the thickness of the second insulating layer 103 d is about 1.5 nm.

In some embodiments, the word line 103 further includes a work function member 103 e disposed over the conductive layer 103 b and the conductive member 103 c, and a gate insulating member 103 f disposed over the work function member 103 e. In some embodiments, the work function member 103 e and the gate insulating member 103 f are surrounded by the first insulating layer 103 a. In some embodiments, the work function member 103 e is surrounded by the second insulating layer 103 d.

In some embodiments, a top surface 103 j of the work function member 103 e is substantially coplanar with the top surface 103 i of the second insulating layer 103 d. In some embodiments, the work function member 103 e includes polysilicon or polycrystalline silicon. In some embodiments, the work function member 103 e has a low work function. In some embodiments, the work function member 103 e has dual work functions and includes metal and polysilicon. In some embodiments, the work function member 103 e serves as a gate electrode.

In some embodiments, the gate insulating member 103 f is disposed over the second insulating layer 103 d and the work function member 103 e. In some embodiments, the gate insulating member 103 f is in contact with the second insulating layer 103 d and the work function member 103 e. In some embodiments, the gate insulating member 103 f contacts the top surface 103 j of the work function member 103 e and the top surface 103 i of the second insulating layer 103 d. In some embodiments, the work function member 103 e and the gate insulating member 103 f are surrounded by the first insulating layer 103 a. In some embodiments, the gate insulating member 103 f is disposed over the top surface 101 b of the semiconductor substrate 101.

In some embodiments, a width W1 of the gate insulating member 103 f is substantially greater than or equal to a total width W2 of the second insulating layer 103 d and the work function member 103 e. In some embodiments, the total width W2 is a sum of two times a thickness of the second insulating layer 103 d plus a width of the work function member 103 e. In some embodiments, the gate insulating member 103 f includes dielectric material such as nitride. In some embodiments, the gate insulating member 103 f serves as a gate dielectric.

In some embodiments, the memory device 100 further includes an isolation structure 102 adjacent to the word line 103. In some embodiments, the isolation structure 102 extends into the semiconductor substrate 101 from the top surface 101 b toward the bottom surface 101 c. In some embodiments, the isolation structure 102 is a shallow trench isolation (STI). In some embodiments, the isolation structure 102 defines a boundary of the active area 101 a. In some embodiments, the isolation structure 102 is formed of an insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, the like, or a combination thereof. In some embodiments, a depth of the isolation structure 102 is substantially greater than a depth of the word line 103.

In some embodiments, the memory device 100 further includes a mask layer 104 disposed over the top surface 101 b of the semiconductor substrate 101 and the isolation structure 102. In some embodiments, the mask layer 104 is disposed over the first insulating layer 103 a. In some embodiments, the mask layer 104 is in contact with the top surface 103 h of the first insulating layer 103 a. In some embodiments, the mask layer 104 is disposed between the gate insulating member 103 f and the semiconductor substrate 101 and between the gate insulating member 103 f and the isolation structure 102. In some embodiments, the mask layer 104 includes dielectric material such as nitride or the like.

Because the second insulating layer 103 d is disposed between the work function member 103 e and the conductive layer 103 b, an adhesion between the work function member 103 e and the conductive layer 103 b is increased or improved. Therefore, shrinkage or disappearance of the work function member 103 e after a thermal process can be prevented. Overall performance of the memory device 100 can be improved.

FIG. 2 is a schematic cross-sectional side view of a memory device 200 in accordance with some embodiments of the present disclosure. The memory device 200 is similar to the memory device 100 of FIG. 1 , except there is a third insulating layer 103 k over the work function member 103 e such that the work function member 103 e is enclosed by the second insulating layer 103 d and the third insulating layer 103 k. In some embodiments, the first insulating layer 103 a is entirely covered by the conductive layer 103 b and the second insulating layer 103 d. In some embodiments, the gate insulating member 103 f is surrounded by the second insulating layer 103 d and disposed over the third insulating layer 103 k and the work function member 103 e.

In some embodiments, the third insulating layer 103 k is surrounded by the second insulating layer 103 d. In some embodiments, the third insulating layer 103 k is disposed conformal to the top surface 103 j of the work function member 103 e. In some embodiments, a top surface 103 m of the third insulating layer 103 k is substantially lower than the top surface 103 i of the second insulating layer 103 d, the top surface 103 h of the first insulating layer 103 a and the top surface 101 b of the semiconductor substrate 101.

In some embodiments, a thickness of the second insulating layer 103 d is substantially equal to a thickness of the third insulating layer 103 k. In some embodiments, the second insulating layer 103 d and the third insulating layer 103 k are integrally formed. In some embodiments, the third insulating layer 103 k includes oxide. In some embodiments, the second insulating layer 103 d and the third insulating layer 103 k include a same material.

FIG. 3 is a schematic cross-sectional side view of a memory device 300 in accordance with some embodiments of the present disclosure. The memory device 300 is similar to the memory device 200 of FIG. 2 , except the third insulating layer 103 k in the memory device 200 of FIG. 2 is omitted. In some embodiments, the gate insulating member 103 f is in contact with the work function member 103 e. The second insulating layer 103 d surrounds the work function member 103 e and the gate insulating member 103 f.

FIG. 4 is a schematic cross-sectional side view of a memory device 400 in accordance with some embodiments of the present disclosure. The memory device 400 is similar to the memory device 200 of FIG. 2 , except the second insulating layer 103 d is also disposed over the top surface 101 b of the semiconductor substrate 101 and the isolation structure 102. In some embodiments, the second insulating layer 103 d is disposed over the mask layer 104. In some embodiments, the top surface 103 i of the second insulating layer 103 d is above the top surface 103 h of the first insulating layer 103 a and the top surface 101 b of the semiconductor substrate 101.

FIG. 5 is a schematic cross-sectional side view of a memory device 500 in accordance with some embodiments of the present disclosure. The memory device 500 is similar to the memory device 100 of FIG. 1 , except the second insulating layer 103 d is disposed under the work function member 103 e. The second insulating layer 103 d is between the work function member 103 e and the conductive layer 103 b. In some embodiments, the second insulating layer 103 d is enclosed by the work function member 103 e, the conductive layer 103 b and the first insulating layer 103 a. In some embodiments, the top surface 103 i of the second insulating layer 103 d is entirely in contact with the work function member 103 e. In some embodiments, the top surface 103 i is substantially lower than the top surface 103 j of the work function member 103 e.

FIG. 6 is a flow diagram illustrating a method S600 of manufacturing the memory device 100, 200, 300, 400 or 500 in accordance with some embodiments of the present disclosure, and FIGS. 7 to 37 illustrate cross-sectional views of intermediate stages in formation of the memory device 100, 200, 300, 400 or 500 in accordance with some embodiments of the present disclosure.

The stages shown in FIGS. 7 to 37 are also illustrated schematically in the flow diagram in FIG. 6 . In following discussion, the fabrication stages shown in FIGS. 7 to 37 are discussed in reference to process steps shown in FIG. 6 . The method S600 includes a number of operations, and description and illustration are not deemed as a limitation to a sequence of the operations. The method S600 includes a number of steps (S601, S602, S603, S604, S605, S606 and S607).

Referring to FIG. 7 , a semiconductor substrate 101 is provided according to step S601 in FIG. 6 . In some embodiments, the semiconductor substrate 101 is defined with an active area 101 a and includes an isolation structure 102 surrounding the active area 101 a. In some embodiments, the isolation structure 102 extends from a top surface 101 b toward a bottom surface 101 c of the semiconductor substrate 101.

Referring to FIG. 8 , a recess 101 d extending into the semiconductor substrate 101 is formed according to step S602 in FIG. 6 . In some embodiments, the recess 101 d extends across the active area 101 a. In some embodiments, the formation of the recess 101 d includes removing some portions of the semiconductor substrate 101. In some embodiments, the recess 101 d extends from the top surface 101 b toward the bottom surface 101 c of the semiconductor substrate 101.

Referring to FIG. 9 , a first insulating layer 103 a conformal to the recess 101 d is formed according to step S603 in FIG. 6 . In some embodiments, the first insulating layer 103 a is formed by deposition, oxidation or any other suitable process. In some embodiments, a top surface 103 h of the first insulating layer 103 a is substantially coplanar with the top surface 101 b of the semiconductor substrate 101.

Referring to FIG. 10 , a first conductive material 105 conformal to the first insulating layer 103 a is disposed according to step S604 in FIG. 6 . In some embodiments, the first conductive material 105 is disposed by deposition or any other suitable process. In some embodiments, the first conductive material 105 includes titanium nitride (TiN).

Referring to FIG. 11 , a conductive member 103 c surrounded by the first conductive material 105 is formed according to step S605 in FIG. 6 . In some embodiments, the conductive member 103 c is formed by disposing a second conductive material surrounded by the first conductive material 105, and then removing a portion of the second conductive material to form the conductive member 103 c. In some embodiments, the second conductive material is disposed by deposition or any other suitable process. In some embodiments, the portion of the second conductive material is removed by etching or any other suitable process. In some embodiments, the second conductive material includes tungsten (W).

Referring to FIGS. 12 and 13 , a third conductive material 106 is disposed over the conductive member 103 c, and a portion of the first conductive material 105 above the third conductive material 106 is removed to form a conductive layer 103 b according to step S606 in FIG. 6 . In some embodiments, the conductive layer 103 b encloses the conductive member 103 c. In some embodiments, the third conductive material 106 is disposed on the conductive member 103 c by deposition or any other suitable process. In some embodiments, the first conductive material 105 and the third conductive material 106 are a same material. In some embodiments, the third conductive material 106 includes titanium nitride (TiN). In some embodiments, after the disposing of the third conductive material 106 as shown in FIG. 12 , a portion of the first conductive material 105 is removed to form the conductive layer 103 b as shown in FIG. 13 . In some embodiments, the portion of the first conductive material 105 is removed by etching, cleaning or any other suitable process.

Referring to FIGS. 14 and 15 , a second insulating layer 103 d over the conductive layer 103 b and conformal to the first insulating layer 103 a is formed according to step S607 in FIG. 6 . In some embodiments, the formation of the second insulating layer 103 d includes disposing a first insulating material 107 over the semiconductor substrate 101, the isolation structure 102, the conductive layer 103 b and the first insulating layer 103 a. In some embodiments, the first insulating material 107 is disposed by atomic layer deposition (ALD) or any other suitable process.

In some embodiments, after the disposing of the first insulating material 107 as shown in FIG. 14 , a portion of the first insulating material 107 disposed over the semiconductor substrate 101, the isolation structure 102 and the first insulating layer 103 a is removed to form the second insulating layer 103 d as shown in FIG. 15 . In some embodiments, the portion of the first insulating material 107 is removed by anisotropic etching, planarization or any other suitable process. In some embodiments, a top surface 103 i of the second insulating layer 103 d is substantially lower than the top surface 103 h of the first insulating layer 103 a and the top surface 101 b of the semiconductor substrate 101. In some embodiments, the formation of the second insulating layer 103 d is performed after the formation of the conductive layer 103 b and the formation of the conductive member 103 c.

Referring to FIGS. 16 and 17 , a work function member 103 e over the conductive layer 103 b and surrounded by the second insulating layer 103 d is formed. In some embodiments, the work function member 103 e is formed by disposing a work function material 108 surrounded by the second insulating layer 103 d and the first insulating layer 103 a as shown in FIG. 16 , and then removing a portion of the work function material 108 to form the work function member 103 e as shown in FIG. 17 . In some embodiments, the work function material 108 is disposed by deposition, CVD or any other suitable process. In some embodiments, the portion of the work function material 108 is removed by etching or any other suitable process. In some embodiments, the work function material 108 includes polysilicon. In some embodiments, a top surface 103 j of the work function member 103 e is substantially coplanar with the top surface 103 i of the second insulating layer 103 d.

Referring to FIG. 18 , a mask layer 104 is formed over the semiconductor substrate 101, the isolation structure 102 and the first insulating layer 103 a. In some embodiments, the mask layer 104 is in contact with the top surface 103 h of the first insulating layer 103 a. In some embodiments, the mask layer 104 is formed by disposing a masking material such as nitride.

Referring to FIG. 19 , a gate insulating member 103 f is formed over the work function member 103 e, the second insulating layer 103 d and the mask layer 104. In some embodiments, the formation of the gate insulating member 103 f includes disposing a gate insulating material by deposition or any other suitable process. In some embodiments, the memory device 100 of FIG. 1 is formed as shown in FIG. 19 .

In some embodiments, the memory device 200 of FIG. 2 can be formed by the following steps after the disposing of the first insulating material 107 as shown in FIG. 14 . After the disposing of the first insulating material 107 as shown in FIG. 14 , a portion of the first insulating material 107 disposed over the semiconductor substrate 101, the isolation structure 102 and the first insulating layer 103 a is removed to form the second insulating layer 103 d as shown in FIG. 20 . In some embodiments, the portion of the first insulating material 107 is removed by anisotropic etching, planarization or any other suitable process. In some embodiments, the top surface 103 i of the second insulating layer 103 d is substantially coplanar with the top surface 103 h of the first insulating layer 103 a and the top surface 101 b of the semiconductor substrate 101.

In some embodiments, after the formation of the second insulating layer 103 d, the work function member 103 e is formed as shown in FIGS. 21 and 22 , in a manner similar to the steps as discussed above and illustrated in FIGS. 16 and 17 . In some embodiments, the top surface 103 j of the work function member 103 e is substantially lower than the top surface 103 i of the second insulating layer 103 d.

In some embodiments, after the formation of the work function member 103 e as shown in FIG. 22 , a third insulating layer 103 k is formed over the work function member 103 e, wherein the third insulating layer 103 k is surrounded by the second insulating layer 103 d, as shown in FIG. 23 . In some embodiments, the formation of the third insulating layer 103 k includes disposing a second insulating material over the work function member 103 e. In some embodiments, the second insulating material is disposed by atomic layer deposition (ALD) or any other suitable process. In some embodiments, a top surface 103 m of the third insulating layer 103 k is substantially lower than the top surface 103 i of the second insulating layer 103 d. In some embodiments, the first insulating material 107 and the second insulating material include a same material. In some embodiments, the second insulating layer 103 d and the third insulating layer 103 k are integrally formed.

In some embodiments, after the formation of the third insulating layer 103 m, the mask layer 104 and the gate insulating member 103 f are formed in a manner similar to the steps as discussed above and illustrated in FIGS. 18 and 19 . In some embodiments, the memory device 200 of FIG. 2 is formed as shown in FIG. 24 .

In some embodiments, the memory device 300 of FIG. 3 can be formed by the following steps after the formation of the second insulating layer 103 d as shown in FIG. 22 . After the formation of the second insulating layer 103 d as shown in FIG. 22 , the mask layer 104 is disposed over the first insulating layer 103 a and the second insulating layer 103 d as shown in FIG. 25 . In some embodiments, the mask layer 104 is disposed in a manner similar to the steps as discussed above and illustrated in FIG. 18 . After the disposing of the mask layer 104, the gate insulating member 103 f is formed in a manner similar to the steps as discussed above and illustrated in FIG. 19 . In some embodiments, the memory device 300 of FIG. 3 is formed as shown in FIG. 26 .

In some embodiments, the memory device 400 of FIG. 4 can be formed by the following steps after the formation of the conductive layer 103 b as shown in FIG. 13 . After the formation of the conductive layer 103 b as shown in FIG. 13 , the mask layer 104 is disposed over the first insulating layer 103 a, the semiconductor substrate 101 and the isolation structure 102 as shown in FIG. 27 . In some embodiments, the mask layer 104 is disposed in a manner similar to the steps as discussed above and illustrated in FIG. 18 .

In some embodiments, after the disposing of the mask layer 104, the first insulating material 107 is disposed over the mask layer 104 and the conductive layer 103 b and conformal to the first insulating layer 103 a as shown in FIG. 28 . In some embodiments, the first insulating material 107 is disposed in a manner similar to the steps as discussed above and illustrated in FIG. 14 . In some embodiments, the second insulating layer 103 d is formed as shown in FIG. 28 .

In some embodiments, after the formation of the second insulating layer 103 d, the work function material 108 is disposed as shown in FIG. 29 . In some embodiments, the work function material 108 is disposed in a manner similar to the steps as discussed above and illustrated in FIG. 16 . In some embodiments, after the disposing of the work function material 108, a portion of the work function material 108 is removed to form the work function member 103 e as shown in FIG. 30 . In some embodiments, the portion of the work function material 108 is removed in a manner similar to the steps as discussed above and illustrated in FIG. 17 .

In some embodiments, after the formation of the work function member 103 e, the third insulating layer 103 k is disposed over the work function member 103 e as shown in FIG. 31 . In some embodiments, the third insulating layer 103 k is disposed in a manner similar to the steps as discussed above and illustrated in FIG. 23 . In some embodiments, after the formation of the third insulating layer 103 k, the gate insulating member 103 f is formed over the second insulating layer 103 d and the third insulating layer 103 k as shown in FIG. 32 . In some embodiments, the gate insulating member 103 f is formed in a manner similar to the steps as discussed above or illustrated in FIG. 19 . In some embodiments, the memory device 400 of FIG. 4 is formed as shown in FIG. 32 .

In some embodiments, the memory device 500 of FIG. 5 can be formed by the following steps after the formation of the conductive layer 103 b as shown in FIG. 13 . In some embodiments, after the formation of the conductive layer 103 b as shown in FIG. 13 , a second insulating layer 103 d is formed over the conductive layer 103 b as shown in FIG. 33 . In some embodiments, the second insulating layer 103 d is formed in a manner similar to the steps as discussed above and illustrated in FIGS. 14 and 15 .

In some embodiments, after the formation of the second insulating layer 103 d, the work function member 103 e is formed as shown in FIG. 35 . In some embodiments, the work function member 103 e is formed in a manner similar to the steps as discussed above and illustrated in FIGS. 16 and 17 . In some embodiments, the top surface 103 i of the second insulating layer 103 d is substantially lower than the top surface 103 j of the work function member 103 e.

In some embodiments, after the formation of the work function member 103 e, the mask layer 104 and the gate insulating member 103 f are formed as shown in FIGS. 36 and 37 respectively. In some embodiments, the second insulating layer 103 d, the mask layer 104 and the gate insulating member 103 f are formed in a manner similar to the steps as discussed above and illustrated in FIGS. 18 and 19 . In some embodiments, the memory device 500 of FIG. 5 is formed as shown in FIG. 37 .

In an aspect of the present disclosure, a memory device is provided. The memory device includes a semiconductor substrate defined with an active area and including a recess extending into the semiconductor substrate; and a word line disposed within the recess, wherein the word line includes a first insulating layer disposed within and conformal to the recess, a conductive layer surrounded by the first insulating layer, a conductive member enclosed by the conductive layer, and a second insulating layer disposed over the conductive layer and conformal to the first insulating layer.

In another aspect of the present disclosure, a memory device is provided. The memory device includes a semiconductor substrate defined with an active area and including a recess extending into the semiconductor substrate; and a word line disposed within the recess, wherein the word line includes a first insulating layer disposed within and conformal to the recess, a conductive layer surrounded by the first insulating layer, a conductive member enclosed by the conductive layer, a second insulating layer disposed over the conductive layer and conformal to the first insulating layer, a work function member surrounded by the second insulating layer, and a third insulating layer surrounded by the second insulating layer and disposed over the work function member.

In another aspect of the present disclosure, a method of manufacturing a memory device is provided. The method includes steps of providing a semiconductor substrate defined with an active area and including an isolation structure surrounding the active area; forming a recess extending into the semiconductor substrate and across the active area; forming a first insulating layer conformal to the recess; disposing a first conductive material conformal to the first insulating layer; forming a conductive member surrounded by the first conductive material; disposing a second conductive material over the conductive member and removing a portion of the first conductive material above the second conductive material to form a conductive layer enclosing the conductive member; and forming a second insulating layer over the conductive layer and conformal to the first insulating layer.

In conclusion, because an insulating layer is disposed between a work function member and a conductive layer in a word line, an adhesion between the work function member and the conductive layer is increased or improved. Therefore, shrinkage or disappearance of the work function member after a thermal process can be prevented. Overall performance of a memory device and process of manufacturing of the memory device are improved.

Although the present disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims. For example, many of the processes discussed above can be implemented in different methodologies and replaced by other processes, or a combination thereof.

Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein, may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods and steps. 

What is claimed is:
 1. A memory device, comprising: a semiconductor substrate defined with an active area and including a recess extending into the semiconductor substrate; and a word line disposed within the recess, wherein the word line includes a first insulating layer disposed within and conformal to the recess, a conductive layer surrounded by the first insulating layer, a conductive member enclosed by the conductive layer, and a second insulating layer disposed over the conductive layer and conformal to the first insulating layer.
 2. The memory device according to claim 1, wherein the second insulating layer is in contact with the conductive layer.
 3. The memory device according to claim 1, wherein the second insulating layer is disposed above the conductive member and the conductive layer.
 4. The memory device according to claim 1, wherein a thickness of the first insulating layer is substantially greater than or equal to a thickness of the second insulating layer.
 5. The memory device according to claim 1, wherein the second insulating layer is in contact with a top surface of the conductive layer.
 6. The memory device according to claim 1, wherein the second insulating layer is at least partially surrounded by the active area.
 7. The memory device according to claim 1, wherein the conductive layer includes titanium nitride (TiN) or tungsten (W).
 8. The memory device according to claim 1, wherein the word line includes a work function member surrounded by the second insulating layer, and a gate insulating member disposed over the work function member.
 9. The memory device according to claim 8, wherein a top surface of the work function member is substantially coplanar with a top surface of the second insulating layer.
 10. The memory device according to claim 8, wherein the gate insulating member is disposed over the second insulating layer, and in contact with the second insulating layer and the work function member.
 11. The memory device according to claim 8, wherein the work function member and the gate insulating member are surrounded by the first insulating layer, the work function member includes polysilicon, and the gate insulating member includes nitride.
 12. The memory device according to claim 8, wherein a width of the gate insulating member is substantially greater than or equal to a total width of the second insulating layer and the work function member.
 13. A memory device, comprising: a semiconductor substrate defined with an active area and including a recess extending into the semiconductor substrate; and a word line disposed within the recess, wherein the word line includes a first insulating layer disposed within and conformal to the recess, a conductive layer surrounded by the first insulating layer, a conductive member enclosed by the conductive layer, a second insulating layer disposed over the conductive layer and conformal to the first insulating layer, a work function member surrounded by the second insulating layer, and a third insulating layer surrounded by the second insulating layer and disposed over the work function member.
 14. The memory device according to claim 13, wherein the work function member is enclosed by the second insulating layer and the third insulating layer.
 15. The memory device according to claim 13, wherein the third insulating layer is disposed conformal to a top surface of the work function member.
 16. The memory device according to claim 13, wherein a thickness of the second insulating layer is substantially equal to a thickness of the third insulating layer.
 17. The memory device according to claim 13, wherein the second insulating layer and the third insulating layer are integrally formed.
 18. The memory device according to claim 13, wherein the second insulating layer and the third insulating layer include oxide.
 19. The memory device according to claim 13, wherein the first insulating layer is entirely covered by the conductive layer and the second insulating layer.
 20. The memory device according to claim 13, wherein the word line includes a gate insulating member surrounded by the second insulating layer and disposed over the third insulating layer and the work function member. 